Page writes for triple level cell flash memory
US10141050B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 27, 2017 |
| Grant date | Nov 27, 2018 |
| Priority date | — |
| Expiry date | Apr 27, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F2212/7203
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for page writes for triple or higher level cell flash memory is provided. The method includes receiving data in a storage system, from a client that is agnostic of page write requirements for triple or higher level cell flash memory, wherein the page write requirements specify an amount of data and a sequence of writing data for a set of pages to assure read data coherency for the set of pages. The method includes accumulating the received data, in random-access memory (RAM) in the storage system to satisfy the page write requirements for the triple or higher level cell flash memory in the storage system. The method includes writing at least a portion of the accumulated data in accordance with the page write requirements, from the RAM to the triple level cell, or the higher level cell, flash memory in the storage system as an atomic write.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.