Row redundancy with distributed sectors
US10141065B1 · kind B1 · utility
1Cited by
13References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 21, 2017 |
| Grant date | Nov 27, 2018 |
| Priority date | — |
| Expiry date | Dec 21, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/26
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprises an embedded flash memory with row redundancy. The embedded flash memory comprises a memory bank that includes multiple physical sectors, where each physical sector comprises a plurality of erase sectors. In the memory bank, multiple portions of an additional erase sector are respectively distributed among the multiple physical sectors. The multiple portions of the additional erase sector are configured as a row-redundancy sector for the memory bank.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.