Thin film capacitor including alternatively disposed dielectric layers having different thicknesses
US10141115B2 · kind B2 · utility
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14Claims
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Key dates
| Filing date | Mar 20, 2017 |
| Grant date | Nov 27, 2018 |
| Priority date | — |
| Expiry date | Mar 20, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01G4/012
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A thin film capacitor includes a body having first and second electrode layers and first and second dielectric layers alternately stacked on a substrate. A thickness of the first dielectric layer is 1.2 to 3 times that of the second dielectric layer. Therefore, leakage current characteristics of the dielectric layers may be improved, and capacitance of the thin film capacitor may be secured.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.