Oxide semiconductor, coating liquid, method of forming oxide semiconductor film, semiconductor element, display element, image display device and image display system
US10141185B2 · kind B2 · utility
4Cited by
6References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 9, 2017 |
| Grant date | Nov 27, 2018 |
| Priority date | — |
| Expiry date | Jan 9, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K2102/3035
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An oxide semiconductor includes an oxide having a layered structure expressed by an expression of a product of [(AO)(ZO)mi(BO)(ZO)ni]i from i=1 to L. In the product, an atom A is a positive monovalent element, an atom Z is a positive divalent element, an atom B is a positive trivalent element, L is a positive integer, and mi and ni are independent integers greater than or equal to zero. A sum from i=1 to L of (mi+ni) is not zero.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.