Cross-domain ESD protection
US10141301B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 15, 2016 |
| Grant date | Nov 27, 2018 |
| Priority date | — |
| Expiry date | Jun 2, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/921
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices with cross-domain electrostatic discharge (ESD) protection and related fabrication methods are provided. An exemplary semiconductor device includes first domain circuitry, second domain circuitry, and an interface coupled between an output node of the first domain driver circuitry and second domain receiver circuitry. The receiver circuitry includes a transistor having a gate electrode coupled to the interface, with a body electrode of the transistor being coupled to protection circuitry of the first domain circuitry. The body electrode is effectively biased to a reference voltage node of the first domain by the protection circuitry in response to an ESD event to protect the gate oxide of the transistor from a potentially damaging ESD voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.