Patent · US Active

Protected electronic chip

US10141396B2 · kind B2 · utility

0Cited by
3References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 28, 2017
Grant dateNov 27, 2018
Priority date
Expiry dateFeb 28, 2037

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D84/038
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

An electronic chip includes a doped semiconductor substrate of a first conductivity type, a doped buried layer of a second conductivity type overlying the substrate, and a first doped well of the first conductivity type overlying the buried layer. Circuit components can be formed at a top surface of the first doped well and separated from the buried layer. A current detector is coupled to the buried layer and configured detect a bias current flowing into or out of the buried layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.