Patent · US Active

Semiconductor device and method of manufacturing the same

US10141439B2 · kind B2 · utility

0Cited by

2References

9Claims

0Family size

Assignee

Kabushiki Kaisha Toshiba · JP

Inventors

Miki Yumoto · Ota, JP
Masahiko Kuraguchi · Yokohama, JP

Key dates

Filing date	Feb 3, 2017
Grant date	Nov 27, 2018
Priority date	—
Expiry date	Mar 4, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/811
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device according to an embodiment includes a first GaN based semiconductor layer of a first conductive type, a second GaN based semiconductor layer of the first conductive type provided above the first GaN based semiconductor layer, a third GaN based semiconductor layer of a second conductive type provided above a part of the second GaN based semiconductor layer, a epitaxially grown fourth GaN based semiconductor layer of the first conductive type provided above the third GaN based semiconductor layer, a gate insulating film provided on the second, third, and fourth GaN based semiconductor layer, a gate electrode provided on the gate insulating film, a first electrode provided on the fourth GaN based semiconductor layer, a second electrode provided at the side of the first GaN based semiconductor layer opposite to the second GaN based semiconductor layer, and a third electrode provided on the second GaN based semiconductor layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.