Oxide thin-film transistor with illuminated OHMIC contact layers, array substrate and methods for manufacturing the same, and display device
US10141444B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 17, 2016 |
| Grant date | Nov 27, 2018 |
| Priority date | — |
| Expiry date | May 17, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/126
Abstract
An oxide thin-film transistor, an array substrate and methods for manufacturing the same, and a display device are provided. The method for manufacturing the oxide thin-film transistor includes: forming a pattern of an oxide semi-conductor layer above a base substrate; and illuminating, by a light source, two opposite boundary regions of the pattern of the oxide semi-conductor layer, where the illuminated two opposite boundary regions of the pattern of the oxide semi-conductor layer form ohmic contact layers and a region of the pattern of the oxide semi-conductor layer that is not illuminated forms a semi-conductor active layer; forming a source electrode and a drain electrode which are connected to the semi-conductor active layer via the ohmic contact layers respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.