Oxide thin film transistor, array substrate and display device
US10141449B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 15, 2015 |
| Grant date | Nov 27, 2018 |
| Priority date | — |
| Expiry date | Sep 15, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
The embodiments of the present invention provides an oxide TFT, an array substrate and a display device, an oxide channel layer of the oxide TFT comprises a front channel oxide layer and a back channel oxide layer, a conduction band bottom of the back channel oxide layer being higher than a conduction band bottom of the front channel oxide layer, and a band gap of the back channel oxide layer being larger than a band gap of the front channel oxide layer. In the oxide TFT, the array substrate and the display device provided in the present invention, it is possible to accumulate a large number of electrons through the potential difference formed between oxide channel layers of a multilayer structure so as to increase the carrier concentration in the oxide channel layers to achieve the purpose of improving TFT mobility without damaging TFT stability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.