Electrode layer, thin film transistor, array substrate and display apparatus having the same, and fabricating method thereof

US10141451B2 · kind B2 · utility

Assignee

• BOE Technology Group Co., Ltd. · CN

Inventors

• Meili Wang · Beijing, CN
• Liangchen Yan · Beijing, CN

Key dates

• Filing date: Jun 7, 2016
• Grant date: Nov 27, 2018
• Expiry date: Jun 7, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D99/00

Abstract

The present application discloses a thin film transistor including an active layer, and a source electrode and a drain electrode on the active layer; each of the source electrode and the drain electrode includes a metal electrode sub-layer, and a diffusion barrier sub-layer made of a material comprising M1OaNb, wherein M1 is a single metal or a combination of metals, a≥0, and b>0, between the metal electrode sub-layer and the active layer for preventing diffusion of metal electrode material into the active layer.