Solar cells having differentiated P-type and N-type architectures

US10141462B2 · kind B2 · utility

Assignee

• SUNPOWER CORPORATION · US

Inventors

• David D. Smith · Dublin, US
• Ann Waldhauer · La Honda, US
• Venkatasubramani Balu · Santa Clara, US
• Kieran Mark Tracy · San Jose, US

Key dates

• Filing date: Dec 19, 2016
• Grant date: Nov 27, 2018
• Expiry date: Mar 6, 2037

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

Methods of fabricating solar cell emitter regions with differentiated P-type and N-type region architectures, and the resulting solar cells, are described herein. In an example, a solar cell includes an N-type semiconductor substrate having a light-receiving surface and a back surface. A plurality of N-type polycrystalline silicon regions is disposed on a first thin dielectric layer disposed on the back surface of the N-type semiconductor substrate. A plurality of P-type polycrystalline silicon regions is disposed on a second thin dielectric layer disposed in a corresponding one of a plurality of trenches interleaving the plurality of N-type polycrystalline silicon regions in the back surface of the N-type semiconductor substrate.