Photovoltaic devices and method of making

US10141473B1 · kind B1 · utility

Assignee

• First Solar, Inc. · US

Inventors

• Holly Ann Blaydes · Burnt Hills, US
• Kristian William Andreini · Burnt Hills, US
• William Hullinger Huber · Scotia, US
• Eugene Thomas Hinners · Gansevoort, US
• Joseph John Shiang · Niskayuna, US
• Yong Liang · Niskayuna, US
• Jongwoo Choi · Suwon-si, KR
• Adam Fraser Halverson · Albany, US

Key dates

• Filing date: Jul 11, 2018
• Grant date: Nov 27, 2018
• Expiry date: Jul 11, 2038

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

Embodiments of a photovoltaic device are provided herein. The photovoltaic device can include a layer stack and an absorber layer disposed on the layer stack. The absorber layer can include a first region and a second region. Each of the first region of the absorber layer and the second region of the absorber layer can include a compound comprising cadmium, selenium, and tellurium. An atomic concentration of selenium can vary across the absorber layer. The first region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. The second region of the absorber layer can have a thickness between 100 nanometers to 3000 nanometers. A ratio of an average atomic concentration of selenium in the first region of the absorber layer to an average atomic concentration of selenium in the second region of the absorber layer can be greater than 10.