Selective phase change material growth in high aspect ratio dielectric pores for semiconductor device fabrication

US10141503B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Matthew J. BrightSky · Pound Ridge, US
• Robert L. Bruce · White Plains, US
• Takeshi Masuda · Musashino, JP

Key dates

• Filing date: Nov 3, 2017
• Grant date: Nov 27, 2018
• Expiry date: Nov 3, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8825

Abstract

A metal liner is deposited conformally to a pore within a first dielectric material of a semiconductor device. The pore extends through the first dielectric material to a top surface of a first metal electrode. The metal liner is etched such that the metal liner only substantially remains on sidewalls of the pore. A phase change material is selectively deposited within the pore of the first dielectric layer to substantially fill the pore with the phase change material. The selective deposition of the phase change material produces a growth rate of phase change material on the metal liner at a substantially greater rate than a growth rate of the phase change material on exposed surfaces of the first dielectric material.