Broadband radio frequency power amplifiers, and methods of manufacture thereof
US10141899B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 6, 2017 |
| Grant date | Nov 27, 2018 |
| Priority date | — |
| Expiry date | Feb 11, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/451
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An embodiment of an amplifier has a bandwidth defined by low and upper cutoff frequencies. The amplifier includes an input impedance matching circuit and a transistor. The transistor has a gate, a first current conducting terminal coupled to an output of the amplifier, and a second current conducting terminal coupled to a reference node. The input impedance matching circuit has a filter input coupled to an input of the amplifier, a filter output coupled to the gate of the transistor, and a multiple pole filter coupled between the filter input and the filter output. A first pole of the filter is positioned at a first frequency within the bandwidth, and a second pole of the filter is positioned at a second frequency outside the bandwidth. The input impedance matching circuit is configured to filter the input RF signal to produce a filtered RF signal at the filter output.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.