Semiconductor device and method of producing semiconductor device
US10147687B2 · kind B2 · utility
1Cited by
28References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 11, 2017 |
| Grant date | Dec 4, 2018 |
| Priority date | — |
| Expiry date | Dec 11, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device provided on a semiconductor substrate includes an element region including an element, a moisture-resistant frame surrounding the element region, an insulating layer provided between the moisture-resistant frame and an outer peripheral edge of the semiconductor device and on the semiconductor substrate, a first metal line extending along the outer peripheral edge and provided in the insulating layer, and a groove provided in the insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.