Test structures for manufacturing process of organic photo diode imaging array
US10147765B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2016 |
| Grant date | Dec 4, 2018 |
| Priority date | — |
| Expiry date | Dec 16, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/34
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A test structure for characterizing an organic photodiode image sensor includes, on a common substrate, a cathode sheet resistance portion; a diode capacitance portion; an organic photodiode sheet resistance portion; a contact resistance portion; a step coverage portion; a quantum efficiency portion; a film adhesion portion; and an inkjet printing portion. The organic photodiode sheet resistance portion includes gate metal sets, each gate metal set including four evenly spaced metal lines terminating in a probe point, wherein the spacing within each gate metal set is progressively increased from a first gate metal set to a last gate metal set, and wherein a spacing between each gate metal set is larger than the spacing within any gate metal set; and an organic photodiode sheet formed over the gate metal sets.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.