Magnetic memory devices
US10147871B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 30, 2017 |
| Grant date | Dec 4, 2018 |
| Priority date | — |
| Expiry date | Mar 30, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
Abstract
A magnetic memory device may include a magnetic tunnel junction pattern that comprises a tunnel barrier pattern, a first magnetic pattern and a second magnetic pattern, a tunnel barrier pattern between the first and second magnetic patterns, a non-magnetic pattern on the second magnetic pattern, and a magnetic material between at least a distal portion of the non-magnetic pattern and the second magnetic pattern. The magnetic material may include a set of fine magnetic patterns between the second magnetic pattern and the non-magnetic pattern, the set of fine magnetic patterns including a pattern of fine magnetic patterns spaced apart from each other in a direction parallel to an interface between the second magnetic pattern and the non-magnetic pattern. The magnetic material may include magnetic atoms, and the non-magnetic material may include a proximate portion that is proximate to the second magnetic pattern, the proximate portion doped with the magnetic atoms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.