Plasma-enhanced chemical vapor deposition methods for graphene deposition
US10151027B2 · kind B2 · utility
1Cited by
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12Claims
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Key dates
| Filing date | Mar 1, 2017 |
| Grant date | Dec 11, 2018 |
| Priority date | — |
| Expiry date | Mar 1, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A graphene deposition process. The process includes the steps of placing a substrate into a deposition chamber and heating the chamber, generating radio frequency plasma at a location proximate to the substrate while flowing a precursor gas containing carbon through the plasma and over the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.