Method for producing crystal of silicon carbide, and crystal production device
US10151046B2 · kind B2 · utility
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2References
9Claims
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Key dates
| Filing date | Sep 10, 2015 |
| Grant date | Dec 11, 2018 |
| Priority date | — |
| Expiry date | Sep 10, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02433
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided is a method that allows growing a single crystal of silicon carbide on an off-substrate of silicon carbide while suppressing surface roughening. The method for producing a crystal of silicon carbide includes rotating a seed crystal of silicon carbide while bringing the seed crystal into contact with a starting material solution containing silicon and carbon. A crystal growth surface of the seed crystal has an off-angle, and the position of a rotation center of the seed crystal lies downstream of the central position of the seed crystal in a step flow direction that is a formation direction of the off-angle.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.