Doped ferroelectric hafnium oxide film devices
US10153155B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 6, 2016 |
| Grant date | Dec 11, 2018 |
| Priority date | — |
| Expiry date | Oct 17, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/684
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Techniques for forming an electronic device having a ferroelectric film are described. The electronic device comprises a ferroelectric material having one or more crystalline structures. The one or more crystalline structures may comprise hafnium, oxygen, and one or more dopants. The one or more dopants are distributed in the ferroelectric material to form a first layer, a second layer, and a third layer. The second layer is positioned between the first layer and the third layer. Distribution of one or more dopants within the first layer, the second layer, and the third layer may promote a crystalline structure to have an orthorhombic phase.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.