Metal-semiconductor heterodimension field effect transistors (MESHFET) and high electron mobility transistor (HEMT) based device and method of making the same
US10153273B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 5, 2017 |
| Grant date | Dec 11, 2018 |
| Priority date | — |
| Expiry date | Dec 5, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is provided that comprises a base structure, a first channel layer overlying the base structure, a second channel layer overlying the first channel layer, and first, second, and third ohmic contacts overlying the second channel layer. The semiconductor device further comprises a metal-semiconductor heterodimension field effect transistor that is formed between the first and second ohmic contacts, the metal-semiconductor heterodimension field effect transistor including a first gate formed through the first and second channel layers. The semiconductor device yet further comprises a high electron mobility transistor formed between the second and third ohmic contacts, the high electron mobility transistor including a second gate formed through the second channel layer without extending through the first channel layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.