Stacked-chip backside-illuminated SPAD sensor with high fill-factor
US10153310B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 18, 2016 |
| Grant date | Dec 11, 2018 |
| Priority date | — |
| Expiry date | Jul 18, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J2001/442
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A photon detection device includes a single photon avalanche diode (SPAD) disposed in a semiconductor layer. A guard ring structure is disposed in the semiconductor layer surrounding the SPAD to isolate the SPAD. A well region is disposed in the semiconductor layer surrounding the guard ring structure and disposed along an outside perimeter of the photon detection device. A contact region is disposed in the well region only in a corner region of the outside perimeter such that there is no contact region disposed along side regions of the outside perimeter. A distance between an inside edge of the guard ring structure and the contact region in the corner region of the outside perimeter is greater than a distance between the inside edge of the guard ring structure and the side regions of the outside perimeter such that an electric field distribution is uniform around the photon detection device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.