Semiconductor device including data storage pattern between isolation lines
US10153327B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 21, 2017 |
| Grant date | Dec 11, 2018 |
| Priority date | — |
| Expiry date | Dec 21, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
A semiconductor device includes first isolation lines positioned above a substrate and extending in a first direction. Second isolation lines are positioned above the first isolation lines and extend in a second direction, perpendicular to the first direction, to have a right angle on a plane parallel to an upper surface of the substrate. A first conductive line is disposed between the first isolation lines. The first conductive line is spaced apart from the substrate. A second conductive line is disposed between the second isolation lines. First data storage patterns are disposed between the first isolation lines. The first data storage patterns are positioned above the first conductive line. Second data storage patterns are disposed between the second isolation lines. The second data storage patterns are positioned above the second conductive line. A third conductive line is positioned above the second isolation lines and extends in the first direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.