Semiconductor device and a display device including the same
US10153336B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 1, 2017 |
| Grant date | Dec 11, 2018 |
| Priority date | — |
| Expiry date | May 1, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1216
Abstract
A semiconductor device including a semiconductor layer, a first electrode, and a second electrode. The semiconductor layer includes a first source region, a first drain region, a second source region, and a second drain region connected to a channel region. The first gate electrode is disposed below the semiconductor layer. The first gate electrode is insulated from the semiconductor layer. The first gate electrode at least partially overlaps the shared channel region. The second gate electrode is disposed above the semiconductor layer. The second gate electrode is insulated by a second gate insulating layer. The second gate electrode at least partially overlaps the channel region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.