Transistor having high electron mobility and method of its manufacture

US10153363B2 · kind B2 · utility

Assignee

• Robert Bosch GmbH · DE

Inventors

• Michael Grieb · Renningen, DE
• Simon Jauss · Eßlingen, DE
• Stephan Schwaiger · Bodelshausen, DE

Key dates

• Filing date: Apr 27, 2016
• Grant date: Dec 11, 2018
• Expiry date: Apr 27, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/411

Abstract

A method for manufacturing a transistor having high electron mobility, encompassing a substrate having a heterostructure, in particular an AlGaN/GaN heterostructure, having the steps of: generation of a gate electrode by patterning a semiconductor layer that is applied onto the heterostructure, the semiconductor layer encompassing, in particular, polysilicon; application of a passivating layer onto the semiconductor layer; formation of drain regions and source regions by generation of first vertical openings that extend at least into the heterostructure; generation of ohmic contacts in the drain regions and in the source regions by partly filling the first vertical openings with a first metal at least to the height of the passivating layer; and application of a second metal layer onto the ohmic contacts, the second metal layer projecting beyond the passivating layer.