Semiconductor light-emitting device
US10153397B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 29, 2017 |
| Grant date | Dec 11, 2018 |
| Priority date | — |
| Expiry date | Aug 29, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/10
Abstract
A semiconductor light-emitting device includes a first conductive semiconductor layer on a substrate, a superlattice layer including a plurality of first quantum barrier layers and a plurality of first quantum well layers, the plurality of first quantum barrier layers and the plurality of first quantum well layers being alternately stacked on the first conductive semiconductor layer, an active layer on the superlattice layer, and a second conductive semiconductor layer on the active layer, wherein a Si doping concentration of at least one of the plurality of first quantum well layers is equal to or greater than 1.0×1016/cm3 and less than or equal to 1.0×1018/cm3. Thus, the semiconductor light-emitting device may have increased light output and reliability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.