Light-emitting device and manufacturing method thereof
US10153398B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 1, 2017 |
| Grant date | Dec 11, 2018 |
| Priority date | — |
| Expiry date | Nov 1, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer and an active layer formed therebetween; a surrounding exposed region formed on peripheries of the semiconductor stack, exposing a surface of the first semiconductor layer; a conductive layer formed on the second semiconductor layer, including a first conductive region extending toward and contacting the surface of the first semiconductor layer in the surrounding exposed region; an electrode layer formed on the surrounding exposed region, surrounding the semiconductor stack, contacting the conductive layer and including an electrode pad not overlapping the semiconductor stack; an outside insulating layer covering a portion of the conductive layer and the electrode layer, including a first opening exposing the other portion of the conductive layer; a bonding layer covering the outside insulating layer and electrically connecting to the other portion of the conductive layer through the first opening; and a conductive substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.