Light-emitting element and method for manufacturing the same
US10153613B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2017 |
| Grant date | Dec 11, 2018 |
| Priority date | — |
| Expiry date | Nov 13, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/18
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.