Switch circuit and method of switching radio frequency signals
US10153767B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 21, 2017 |
| Grant date | Dec 11, 2018 |
| Priority date | — |
| Expiry date | Jul 21, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2017/0803
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An RF switch circuit and method for switching RF signals that may be fabricated using common integrated circuit materials such as silicon, particularly using insulating substrate technologies. The RF switch includes switching and shunting transistor groupings to alternatively couple RF input signals to a common RF node, each controlled by a switching control voltage (SW) or its inverse (SW_), which are approximately symmetrical about ground. The transistor groupings each comprise one or more insulating gate FET transistors connected together in a “stacked” series channel configuration, which increases the breakdown voltage across the series connected transistors and improves RF switch compression. A fully integrated RF switch is described including control logic and a negative voltage generator with the RF switch elements. In one embodiment, the fully integrated RF switch includes an oscillator, a charge pump, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.