Semiconductor image sensor with integrated pixel heating and method of operating a semiconductor image sensor
US10154215B2 · kind B2 · utility
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4References
11Claims
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Key dates
| Filing date | May 21, 2015 |
| Grant date | Dec 11, 2018 |
| Priority date | — |
| Expiry date | May 21, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/18
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The semiconductor image sensor comprises a plurality of pixels (1) with photo sensors (2). At least one heater (4) is integrated with the photo sensors and is arranged in at least one of the pixels or in the vicinity of at least one of the pixels. An appropriate operation of the heater will increase the temperature of the relevant pixel. Thus it is possible to achieve a local compensation of a temperature difference that may be due to the operation of an integrated readout circuit (3) or any other integrated component generating heat.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.