Semiconductor device and manufacturing method thereof
US10157800B2 · kind B2 · utility
2Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2017 |
| Grant date | Dec 18, 2018 |
| Priority date | — |
| Expiry date | Jun 28, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/853
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate, a first source/drain feature, a second source/drain feature and a dielectric plug. The substrate has a semiconductor fin. The first source/drain feature is embedded in the semiconductor fin. The second source/drain feature is embedded in the semiconductor fin. The dielectric plug extends from above the semiconductor fin into the semiconductor fin. The dielectric plug is in between the first source/drain feature and the second source/drain feature. The dielectric plug is separated from the first source/drain feature and the second source/drain feature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.