Semiconductor device and manufacturing method thereof
US10157819B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 7, 2017 |
| Grant date | Dec 18, 2018 |
| Priority date | — |
| Expiry date | Dec 7, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53271
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method of manufacturing a semiconductor device, a thermal treatment is performed on a substrate, thereby forming a defect free layer in an upper layer of the substrate, where a remaining layer of the substrate is a bulk layer. A density of defects in the bulk layer is equal to or more than 1×108 cm−3, where the defects are bulk micro defects. An electronic device is formed over the defect free layer. An opening is formed in the defect free layer such that the opening does not reach the bulk layer. The opening is filled with a conductive material, thereby forming a via. The bulk layer is removed so that a bottom part of the via is exposed. A density of defects in the defect free layer is less than 100 cm−3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.