Electrostatic discharge device
US10157905B2 · kind B2 · utility
0Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 7, 2017 |
| Grant date | Dec 18, 2018 |
| Priority date | — |
| Expiry date | Aug 7, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/921
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit device includes at least two epitaxially grown active regions grown onto a substrate, the active regions being placed between a first gate device and a second gate device. The integrated circuit device includes at least one dummy gate between the two epitaxially grown active regions and between the first gate device and the second gate device, wherein each active region is substantially uniform in length. The first gate device and the second device are formed over a first well having a first conductivity type and the dummy gate is formed over a second well having a second conductivity type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.