Image sensing device and manufacturing method thereof
US10157953B2 · kind B2 · utility
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1References
20Claims
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Assignee
Inventors
Key dates
| Filing date | Jun 15, 2017 |
| Grant date | Dec 18, 2018 |
| Priority date | — |
| Expiry date | Jun 15, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Some embodiments of the present disclosure provide a back side illuminated (BSI) image sensor. The back side illuminated (BSI) image sensor includes a semiconductive substrate and an interlayer dielectric (ILD) layer at a front side of the semiconductive substrate. The ILD layer includes a dielectric layer over the semiconductive substrate and a contact partially buried inside the semiconductive substrate. The contact includes a silicide layer including a predetermined thickness proximately in a range from about 600 angstroms to about 1200 angstroms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.