Semiconductor device and method for manufacturing the semiconductor device
US10158013B1 · kind B1 · utility
0Cited by
1References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 1, 2017 |
| Grant date | Dec 18, 2018 |
| Priority date | — |
| Expiry date | Jun 1, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
Abstract
A semiconductor device and a method for manufacturing the semiconductor device. The semiconductor device includes a silicon carbide drift layer, a buried silicon carbide layer and an oxide semiconductor layer; the buried silicon carbide layer is located within the silicon carbide drift layer and the buried silicon carbide layer is covered by the oxide semiconductor layer. Therefore, breakdown behavior and/or long-time reliability of the semiconductor device may be further improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.