Fast-gated photodetector architectures comprising dual voltage sources with a switch configuration
US10158038B1 · kind B1 · utility
57Cited by
70References
30Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 31, 2018 |
| Grant date | Dec 18, 2018 |
| Priority date | — |
| Expiry date | Jul 31, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J2001/4466
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An exemplary photodetector includes a SPAD and a capacitor. The capacitor is configured to be charged, while the SPAD is in a disarmed state, with a bias voltage by a voltage source. The capacitor is further configured to supply, when the SPAD is put in an armed state, the bias voltage to an output node of the SPAD such that a voltage across the SPAD is greater than a breakdown voltage of the SPAD.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.