Polaritonic hot electron infrared photodetector
US10158040B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 7, 2017 |
| Grant date | Dec 18, 2018 |
| Priority date | — |
| Expiry date | Jul 7, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/1233
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Polaritonic hot electron infrared photodetector that detect infrared radiation. In one implementation, the polaritonic hot electron infrared photodetector includes a first contact layer, a second contact layer, a first dielectric layer, a second dielectric layer, and a conductor layer. The first dielectric layer is coupled between the first contact layer and the second contact layer. The second dielectric layer is coupled between the first dielectric layer and the second contact layer. The conductor layer is coupled between the first dielectric layer and the second dielectric layer. Infrared radiation incident upon the conductor layer is operable to create hot carriers that are injected from a conduction band of the conductor layer to a conduction band of the second contact layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.