Light-emitting diode and method for manufacturing the same
US10158043B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 6, 2017 |
| Grant date | Dec 18, 2018 |
| Priority date | — |
| Expiry date | Mar 6, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/034
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a light-emitting diode (LED) includes plural steps as follows. A first type semiconductor layer is formed. A second type semiconductor layer is formed on the first type semiconductor layer. An impurity is implanted into a first portion of the second type semiconductor layer. The concentration of the impurity present in the first portion of the second type semiconductor layer is greater than the concentration of the impurity present in a second portion of the second type semiconductor layer after the implanting, such that the resistivity of the first portion of the second type semiconductor layer is greater than the resistivity of the second portion of the second type semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.