Light emitting diode and fabrication method thereof
US10158045B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 15, 2018 |
| Grant date | Dec 18, 2018 |
| Priority date | — |
| Expiry date | Jan 15, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8162
Abstract
A light-emitting diode includes a light-emitting epitaxial laminated layer with an upper surface including an ohmic contact region and a non-ohmic contact region; an ohmic contact layer in the ohmic contact region; an expanding electrode over the ohmic contact layer, at least a part of which contacts with the upper surface of the light-emitting epitaxial laminated layer; a transparent insulating layer that covers the expanding electrode, the exposed ohmic contact layer and the upper surface of the light-emitting epitaxial laminated layer, having a current channel connected to the expanding electrode; a welding wire electrode over the transparent insulating layer, which connects to the expanding electrode via a current channel; when current is input, current quickly flows to the ohmic contact region along the current channel under the welding wire electrode, so that no current is input to the active layer under the welding wire electrode for lighting.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.