Semiconductor light emitting device
US10158047B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 4, 2016 |
| Grant date | Dec 18, 2018 |
| Priority date | — |
| Expiry date | Apr 4, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/73265
Abstract
Disclosed is a semiconductor light emitting device including: a plurality of semiconductor layers; a first non-conductive reflective film formed on the plurality of semiconductor layer to reflect light from the active layer, wherein the first non-conductive reflective film includes multiple layers and has a first incident angle as the Brewster angle; a second non-conductive reflective film formed on the first non-conductive reflective film to reflect light transmitted through the first non-conductive reflective film, wherein the second non-conductive reflective film includes multiple layers, with part of which being made of a different material from the first non-conductive reflective film, and has a second incident angle as the Brewster angle, different from the first incident angle; and an electrode electrically connected to one of the plurality of semiconductor layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.