Composition for insulator of thin film transistor, insulator and organic thin film transistor prepared thereby
US10158078B2 · kind B2 · utility
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10Claims
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Assignee
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Key dates
| Filing date | Apr 28, 2017 |
| Grant date | Dec 18, 2018 |
| Priority date | — |
| Expiry date | Apr 28, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K2102/00
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
The present invention relates to a composition for an insulator of a thin film transistor, an insulator and an organic thin film transistor comprising the same. The insulator of a thin film transistor prepared with the composition of the present invention displays an excellent permittivity along with a low surface energy, and the organic thin film transistor comprising the same displays an improved organic semiconductor morphology formed on the top surface of the insulator, so that it can bring the effect of reducing leakage current density, improving charge carrier mobility, and improving current on/off ratio.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.