Apparatus with electronic circuitry having reduced leakage current and associated methods
US10158354B2 · kind B2 · utility
4Cited by
3References
20Claims
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Key dates
| Filing date | Feb 10, 2017 |
| Grant date | Dec 18, 2018 |
| Priority date | — |
| Expiry date | Feb 10, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0036
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An apparatus includes an integrated circuit (IC), which includes complementary metal oxide semiconductor (CMOS) circuitry that includes a pull-up network coupled to a supply voltage and at least one input signal. The IC further includes a first metal oxide semiconductor (MOS) transistor coupled to the pull-up network and to a first bias voltage to reduce a gate-induced drain leakage (GIDL) current of the CMOS circuitry.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.