Patent · US Active

Heating system comprising semiconductor light sources

US10159113B2 · kind B2 · utility

4Cited by

4References

13Claims

0Family size

Assignee

KONINIKLIJKE PHILIPS N.V. · NL

Inventors

Holger Moench · Vaals, NL
Guenther Hans Derra · Aachen, DE
Stephan Gronenborn · Aachen, DE
Pavel Pekarski · Eindhoven, NL
Johanna Sophie Kolb · Aachen, DE
Ralf Conrads · Aachen, DE

Key dates

Filing date	Jan 9, 2015
Grant date	Dec 18, 2018
Priority date	—
Expiry date	Apr 15, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH10K71/40
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

The invention describes a heating system (100) and a corresponding method of heating a heating surface (180) of an object (150, 950) to a processing temperature of at least 100° C., wherein the heating system (100) comprises semiconductor light sources (115), and wherein the heating system (100) is adapted to heat an area element of the heating surface (180) with at least 50 semiconductor light sources (115) at the same time. The heating system (100) may be part of a reactor for processing semiconductor structures. The light emitted by means of the semiconductor light sources (115) overlaps at the heating surface (180). Differences of the characteristic of one single semiconductor light source (115) may be blurred at the heating surface (180) such that a homogeneous temperature distribution across a processing surface of a, for example, wafer may be enabled.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.