Site specific deep brain stimulation for enhancement of memory

US10159839B2 · kind B2 · utility

Assignee

• The Regents of the University of California · US

Inventors

• Itzhak Fried · Los Angeles, US
• Nanthia Suthana · Los Angeles, US
• Barbara Knowlton · Los Angeles, US

Key dates

• Filing date: Aug 1, 2016
• Grant date: Dec 25, 2018
• Expiry date: Aug 1, 2036

Classification

• Technology area (CPC A): Human Necessities
• CPC primary: A61N1/3616
• WIPO field: Medical technology
• WIPO sector: Instruments

Abstract

The various embodiments described herein include methods, devices, and systems for enhancement of memory. In one aspect, a method includes: (1) implanting intracranial electrodes in a patient, wherein the electrodes are placed selectively at a specific brain site; (2) determining a threshold for eliciting an after-discharge threshold of the patient, and (3) stimulating the electrodes with current set below the after-discharge threshold while the patient is in a particular phase of sleep so as to enhance memory of the patient.