Masked cation exchange lithography
US10160906B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 24, 2015 |
| Grant date | Dec 25, 2018 |
| Priority date | — |
| Expiry date | Jul 21, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/265
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
We describe a method for patterning of colloidal nanocrystals films that combines a high energy beam treatment with a step of cation exchange. The high energy irradiation causes cross-linking of the ligand molecules present at the nanocrystal surface, and the cross-linked molecules act as a mask for the subsequent cation exchange reaction. Consequently, in the following step of cation exchange, the regions that have not been exposed to beam irradiation are chemically transformed, while the exposed ones remain unchanged. This selective protection allows the design of patterns that are formed by chemically different nanocrystals, yet in a homogeneous nanocrystal film.
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