Time-of-flight detection pixel
US10162048B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2016 |
| Grant date | Dec 25, 2018 |
| Priority date | — |
| Expiry date | Feb 2, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A pixel is formed on a semiconductor substrate that includes a photosensitive area having a first doped layer and a charge collection area of a first conductivity type extending through at least part of the first doped layer. At least two charge storage areas, each including a well of the first conductivity type, are separated from the charge collection area at least by a first portion of the first layer. The first portion is covered by a first gate. Each charge storage area is laterally delimited by two insulated conductive electrodes. A second doped layer of the second conductivity type covers the charge collection area and the charge storage areas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.