Patent · US Active

RRAM array with current limiting element

US10163505B2 · kind B2 · utility

9Cited by
4References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 8, 2017
Grant dateDec 25, 2018
Priority date
Expiry dateDec 8, 2037

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C2213/82
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A resistive random access memory (RRAM) circuit is provided. In some embodiments, the RRAM circuit has a plurality of RRAM cells. A bit-line decoder is configured to concurrently apply a forming signal to the plurality of RRAM cells. A current limiting element is configured to concurrently limit a current of the forming signal applied to the plurality of RRAM cells.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.