Non-volatile memory device for reading data with optimized read voltage
US10163518B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2017 |
| Grant date | Dec 25, 2018 |
| Priority date | — |
| Expiry date | Sep 26, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5644
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Provided is a read method for a nonvolatile memory device for reading data with an optimum read voltage. The read method includes reading data of a first set of memory cells connected to a first word line, by dividing the data of the first set of memory cells into M pages and individually reading data from the M pages. The reading data includes performing an on-chip valley search (OVS) operation on a first valley of two adjacent threshold voltage distributions of the first set of memory cells when reading each of the M pages, and performing a data recover read operation via a read operation on a second word line adjacent to the first word line, based on a result of the OVS operation. In the data recover read operation, a read operation on the first word line is not performed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.