Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
US10163637B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2017 |
| Grant date | Dec 25, 2018 |
| Priority date | — |
| Expiry date | Aug 30, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silicon carbide semiconductor device, including a silicon carbide semiconductor substrate, and an insulating film formed on a front surface of the silicon carbide semiconductor substrate. The silicon carbide semiconductor substrate has fluorine implanted therein, a concentration of which is in a range of 2×1017/cm3 to 4×1018/cm3. A method of manufacturing the silicon carbide semiconductor device includes providing a silicon carbide semiconductor substrate, forming an oxide film on a front surface of the silicon carbide semiconductor substrate, removing a portion of the oxide film to expose the silicon carbide semiconductor substrate, implanting fluorine ions in the front surface of the silicon carbide semiconductor substrate through the removed portion of the oxide film, removing the oxide film after the fluorine ions are implanted, and forming an insulating film on the front surface of the silicon carbide semiconductor substrate after the oxide film is removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.