Metrology system and measurement method using the same
US10163669B2 · kind B2 · utility
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3References
20Claims
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Key dates
| Filing date | Jan 29, 2016 |
| Grant date | Dec 25, 2018 |
| Priority date | — |
| Expiry date | Oct 30, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/024
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for thickness measurement includes forming an implantation region in a semiconductor substrate. A semiconductor layer is formed on the implantation region of the semiconductor substrate. Modulated free carriers are generated in the implantation region of the semiconductor substrate. A probe beam is provided on the semiconductor layer and the implantation region of the semiconductor substrate with the modulated free carriers therein. The probe beam reflected from the semiconductor layer and the implantation region is detected to determine a thickness of the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.